
ECE411_NMOS
Authored by Sameh Ibrahim
Science
University
Used 4+ times

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5 questions
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1.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
Which mask determines the MOSFET width?
AA mask
Poly mask
CC mask
M1 mask
2.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
Which mask determines the length of the MOSFET?
AA mask
Poly mask
CC mask
M1 mask
3.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
Patterns are first drawn by ultraviolet on which layer?
Si substrate
Silicon Oxide
Photoresist
Metal
4.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
In a poly-gate technology, which statement is true?
The drain is fabricated before the source and gate.
The source is fabricated before the drain and gate.
The gate is fabricated before the drain and source.
The drain, gate, and source are fabricated together.
5.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
The following is not a fabrication process
Ion Implantation
Etching
Oxidation
Fermentation
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