Quizzeria

Name

College

What is the name of the process by which a layer of oxide is grown on a semiconductor surface to create an insulating layer?

• Oxidation

• Deposition

• Etching

• Implantation

The battery connections required to forward bias a pn junction are ……

• +ve terminal to p and –ve terminal to n

• -ve terminal to p and +ve terminal to n

• -ve terminal to p and –ve terminal to n

• None of the above

Which is not a P-type material.

• Boron

• Gallium

• Bismuth

• Indium

At absolute zero, Si acts as a

• Semiconductor

• conductor

• Insulator

• Non of these

The principle of a solar cell is same as the photo diode

• TRUE

• FALSE

An electron in conduction band

• Is located near the top of the crystal

• Is bound to its parent atom

• Has no charge

• Has a higher energy than an electron in the valence band

Which of the following is not a common type of photolithography technique?

• Contact printing

• Projection Printing

• Step and repeat printing

• Laser printing

An n*-n Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of ND1=1×1018 cm-3 and ND2= 1×1015 cm-3 corresponding to the n* and n regions respectively. At the operational temperature T, assume complete impurity ionization, kT/q = 25 mV, and intrinsic carrier concentration to be n= 1×1010 cm°3. What is the magnitude of the built in potential of this device?

• 0.748

• 0.460

• 0.288

• 0.173