NanoTech 9

NanoTech 9

University

8 Qs

quiz-placeholder

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NanoTech 9

NanoTech 9

Assessment

Quiz

Science

University

Hard

Created by

Szabolcs Csonka

Used 1+ times

FREE Resource

8 questions

Show all answers

1.

MULTIPLE CHOICE QUESTION

1 min • 1 pt

According to the Moore law, the number of transistors per area doubles every ...
6 months, approximately.
1 year, approximately.
2 years, approximately.
4 years, approximately.

2.

MULTIPLE CHOICE QUESTION

1 min • 1 pt

Steve Jobs introduced the first "smart phone" in 2007. Which sensor was not included?
ambient light sensors.
proximity sensor.
accelerometer sensor.
magnetometer.

3.

MULTIPLE CHOICE QUESTION

1 min • 1 pt

What could the accelerometer measure?
The value and the direction of the gravity.
The position of the user during running.
The velocity of the user during running.
The elevation over the see-level.

4.

MULTIPLE CHOICE QUESTION

1 min • 1 pt

Choose the right process sequence of "lift-off" lithography! Surface cleaning -
metal deposition - resist coating - development - resist removal
metal deposition - resist coating - metal etching - development
resist coating - development - metal deposition - resist removal
resist coating - metal deposition - resist removal

5.

MULTIPLE CHOICE QUESTION

1 min • 1 pt

What is the rate determining step of the LPCVD process?
diffusion of reagents
adsorption on the solid surface
chemical surface reaction
desorption from the solid surface

6.

MULTIPLE CHOICE QUESTION

1 min • 1 pt

The crystalline Si can be etched isotropically by
alkaline wet etching.
deep reactive ion etching.
focused ion beam etching.
acidic wet etching.

7.

MULTIPLE CHOICE QUESTION

1 min • 1 pt

Highly anisotropic plasma etching with passivation, polymer etching, Si isotropic etching.
Reactive Ion Etcing
Bosch DRIE process
Cryo DRIE process
Plasma cleaning

8.

MULTIPLE CHOICE QUESTION

1 min • 1 pt

Typical characteristics of the chemical plasma etching
high selectivity
high surface adhesion coefficient
anisotropic angular distribution of incident ion velocity vector
anisotropic etching profile