ECE214_MOS

The resistance of the MOSFET increases as

• W increases

• L increases

• tox increases

• gate voltage increases

An NMOS is in saturation region when

• VDS > VGS-VTH

• VDS < VGS-VTH

• VDS > VTH

• VDS < VTH

When W/L is constant, the MOS transconductance

• is directly proportional to ID

• is directly proportional to sqrt(ID)

• is inversely proportional to ID

• is inversely proportional to sqrt(ID)

When body effect is considered and VSB is positive,

• the threshold voltage increases

• the threshold voltage decreases

• the threshold voltage stays the same

The MOSFET output resistance

• increases with ID

• decreases with ID

• is not affected by ID