ECE411_Etching

ECE411_Etching

University

6 Qs

quiz-placeholder

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ECE411_Etching

ECE411_Etching

Assessment

Quiz

Science

University

Medium

Created by

Sameh Ibrahim

Used 2+ times

FREE Resource

6 questions

Show all answers

1.

MULTIPLE CHOICE QUESTION

0 sec • 1 pt

Which etching process has the best directionality?

Wet Etching

Plasma Etching

RIE Etching

Ion Sputtering

2.

MULTIPLE CHOICE QUESTION

0 sec • 1 pt

Which etching process has the best selectivity?

Wet Etching

Plasma Etching

RIE Etching

Ion Sputtering

3.

MULTIPLE CHOICE QUESTION

0 sec • 1 pt

Different etch rates in different directions is called

Selectivity

Directionality

Preferentiality

Speed

4.

MULTIPLE CHOICE QUESTION

1 min • 1 pt

If the etch rate of a certain etchant in Silicon is 10 nm/min and in Silicon dioxide is 100 nm/min, then the selectivity of this Silicon dioxide etchant to Silicon is

10

0.1

1

5.

MULTIPLE CHOICE QUESTION

0 sec • 1 pt

Which dry etching process has more free radicals than charged ions?

Ion Sputtering

Plasma Etching

RIE Etching

6.

MULTIPLE CHOICE QUESTION

1 min • 1 pt

If the etch rate of a certain etchant in Silicon is 10 nm/min and in Silicon dioxide is 100 nm/min, then the selectivity of this Silicon dioxide etchant to Silicon is

10

0.1

1