ECE411_CMOS

ECE411_CMOS

University

5 Qs

quiz-placeholder

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ECE411_CMOS

ECE411_CMOS

Assessment

Quiz

Science

University

Medium

Created by

Sameh Ibrahim

Used 4+ times

FREE Resource

5 questions

Show all answers

1.

MULTIPLE SELECT QUESTION

45 sec • 1 pt

Silicon Nitride is used in modern technologies

for LOCOS

As a good masking layer

to form spacers

as a gate

2.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Trench are filled by oxide through

CVD

PVD

Wet oxidation

3.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

The bulk connection of the NMOS is implanted with

the source and drain of the PMOS

The source and drain of the NMOS

The bulk connection of the PMOS

4.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

The mask of PMOS VT adjust

is always the same as the NWELL mask

is sometimes the same as the NWELL mask

is the same as the NMOS VT adjust

5.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

The fins of the FinFET are implemented by

SADP

wet etching

RIE etching