ECE411_NMOS

ECE411_NMOS

University

5 Qs

quiz-placeholder

Similar activities

Digital Electronics Lab

Digital Electronics Lab

University

10 Qs

Stomas/ Ostomy

Stomas/ Ostomy

12th Grade - University

10 Qs

IE_SCR_1

IE_SCR_1

University

10 Qs

ATLAS BHSF 2021 QUIZ - DAY 1

ATLAS BHSF 2021 QUIZ - DAY 1

University

10 Qs

Revision of EDC

Revision of EDC

University

10 Qs

Pemanasan Tes Tulis

Pemanasan Tes Tulis

University

10 Qs

MIND ZONE 2.2 [LEVEL 2]

MIND ZONE 2.2 [LEVEL 2]

University

10 Qs

ED&C

ED&C

University

10 Qs

ECE411_NMOS

ECE411_NMOS

Assessment

Quiz

Science

University

Medium

Created by

Sameh Ibrahim

Used 3+ times

FREE Resource

5 questions

Show all answers

1.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Which mask determines the MOSFET width?

AA mask

Poly mask

CC mask

M1 mask

2.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Which mask determines the length of the MOSFET?

AA mask

Poly mask

CC mask

M1 mask

3.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Patterns are first drawn by ultraviolet on which layer?

Si substrate

Silicon Oxide

Photoresist

Metal

4.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

In a poly-gate technology, which statement is true?

The drain is fabricated before the source and gate.

The source is fabricated before the drain and gate.

The gate is fabricated before the drain and source.

The drain, gate, and source are fabricated together.

5.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

The following is not a fabrication process

Ion Implantation

Etching

Oxidation

Fermentation