EPITAXY QUIZ

What are the purposes by using Si-Epitaxy?

• To enhance the performance of discrete bipolar transistor

• Ability to contour and tailor the doping profile

• Independent choice of Epi and raw wafer doping level

• All of the above

Which are the silicon precursors at IFKM Silicon Epitaxy?

• Dichlorosilane & Tricholorosilane

• Phosphine & Arsine

• Silane & Disilane

• Disilane & Dichlorosilane

Epicent centura system include

I. Transfer chamber

II. Load port

III. Process chamber

IV. Exit chamber

• I & II

• I , II & III

• I , II & IV

• I , II , III & IV

Following are the Epitaxy process step, except?

• Temperature Ramp Step

• Deposit Step

• Stabilize Step

• Temperature Down Step

Which of the following statement is false?

• Heating of the wafer indirect by lamps

• Wafers mainly oriented parallel flow direction of process

  gases

• Existing oxygen inside the gas mixture will enhance the

  crystal growth

• All inner chamber parts who reach high temperature need to be

  extremely clean

What is hetero-epitaxy?

I. Different substrate and film

II. Same substrate and film

III. More complicated, no chemical reaction between substrate and epi layer

IV. To fabricate integrate crystalline layers of different materials

• I & III

• II & IV

• I , III & IV

• II ,III & IV

Which statement is defining the Vapor- phase Epitaxy (VPE)?

• It is method to grow semiconductor crystal layers from the

  melt on solid substrate

• It is gas reactant control by MFC flow over the substrate and

  react to deposit on top of substrate

• It is a physical evaporation process

• It is a source material is heated to produce an evaporate beam

  of particles

What is the autodoping?

• It is unintentional adding of doping during deposition on

  epitaxy layer

• It is out-diffusion of the dopant implanted at wafer frontside

• It is out-diffusion of dopant from backside of the raw wafer

• All of the above

Crystal defects in epitaxial films include

I. Slip lines

II. Epi Spike

III. Stacking fault

IV. Hillock

• I & II

• I , II & III

• I , II & IV

• I , II , III & IV

What is the purpose to use hydrogen chloride (HCl) at Silicon

Epitaxy?

• In-situ cleaning

• Deposition purpose

• Dopant introduction

• Temperature ramping