

Transistor Innovations and Future Developments
Interactive Video
•
Computers
•
9th - 10th Grade
•
Practice Problem
•
Hard
Jennifer Brown
FREE Resource
5 questions
Show all answers
1.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
What was a major innovation that helped in increasing the surface area for electron flow in transistors?
Silicon Doping
Graphene Layers
Quantum Tunneling
FinFET
2.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
What is the key feature of the Gate All Around (GAA) design that differentiates it from FinFET?
Nano ribbons
Quantum computing
Larger fins
Use of graphene
3.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
How does the Gate All Around design improve the control of current flow?
By using larger transistors
By surrounding the nano ribbons on all sides
By increasing the number of fins
By using a different substrate material
4.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
What material is used in the Gate All Around design that makes it feasible for large-scale production?
Carbon nanotubes
Pure silicon
Silicon-germanium alloy
Graphene
5.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
When are Gate All Around transistors expected to become available in consumer electronics?
They are already available
In the next decade
In the next five years
Within the next year
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