PN Junction Diode - Construction

A PN junction is formed by joining:

• Two N-type semiconductors

• Two P-type semiconductors

• A P-type and an N-type semiconductor

• Metal and semiconductor

The region around the junction where charge carriers are depleted is called:

• Neutral region

• Conductive region

• Depletion region

• Active region

In a PN junction diode, the majority carriers in the P-region are:

• Electrons

• Holes

• Neutrons

• Protons

The majority carriers in the N-region of a PN junction are:

• Electrons

• Holes

• Protons

• Ions

When a PN junction is forward biased, the depletion region:

• Becomes wider

• Remains unchanged

• Becomes narrower

• Disappears completely

In reverse bias condition, the current through a PN junction diode is due to:

• Majority carriers

• Holes

• Minority carriers

• Resistance

The PN junction acts as a good conductor when it is:

• Reverse biased

• Forward biased

• Not biased

• Zero biased

The potential barrier of a silicon PN junction diode at room temperature is approximately:

• 1.2 V

• 0.3 V

• 0.5 V

• 0.7 V

During the formation of a PN junction, electrons from N-region diffuse into the P-region and recombine with:

• Electrons

• Holes

• Atoms

• Protons

The width of the depletion layer in a PN junction increases when:

• Forward bias is applied

• The junction is short-circuited

• Reverse bias is applied

• No bias is applied