Semiconductor Quiz

The main reason silicon is preferred over germanium in semiconductor devices is:

• Higher electron mobility

• Smaller band gap

• Lower leakage current at room temperature

• Greater atomic mass

In a silicon atom, how many valence electrons participate in covalent bonding?

• 2

• 4

• 6

• 8

Which statement best describes an intrinsic semiconductor at absolute zero (0 K)?

• Maximum conductivity

• Equal number of electrons and holes

• No free electrons in the conduction band

• Maximum hole concentration

In an N-type semiconductor, majority carriers are:

• Holes created by doping

• Electrons donated by pentavalent atoms

• Holes created by thermal energy

• Free electrons from broken covalent bonds

The term "energy gap" refers to:

• The energy difference between any two atomic orbitals

• The energy needed to free a nucleus from the atom

• The energy difference between the valence band and the conduction band

• The energy of electrons at absolute zero

Which material combination correctly represents a compound semiconductor?

• Silicon and Carbon

• Gallium and Arsenic

• Silicon and Germanium

• Boron and Phosphorus

Which of the following would most effectively increase the conductivity of intrinsic silicon at room temperature?

• Applying a strong electric field

• Adding trivalent impurities

• Increasing temperature

• Applying high pressure

Which group of the periodic table provides pentavalent dopants?

• Group III

• Group IV

• Group V

• Group VI

What is the charge of a donor ion after it donates an electron?

• Neutral

• Positive

• Negative

• Zero

Which one of the following is NOT true about covalent bonding in semiconductors?

• Involves sharing of valence electrons

• Forms a strong lattice structure

• Easily broken at high temperatures

• Allows free movement of electrons at room temperature