Nanofabrication Techniques Quiz

Which of the following techniques is NOT typically considered a top-down nanofabrication method?

• Electron Beam Lithography (EBL)

• Reactive Ion Etching (RIE)

• Chemical Vapor Deposition (CVD)

• Photolithography

Which technique represents a bottom-up approach that involves assembling atomic monolayers sequentially onto a substrate?

• Reactive Ion Etching

• Atomic Layer Deposition (ALD)

• Photolithography

• Ion Beam Milling

What type of ion source is most commonly used in Focused Ion Beam (FIB) systems?

• Oxygen plasma source

• Argon gas source

• Liquid-metal ion source (Gallium)

• Electron field emission source

What is a primary advantage of Electron Beam Lithography (EBL) compared to conventional photolithography?

• Lower production cost

• Higher throughput and speed

• No vacuum required

• Higher resolution (sub-10 nm capability)

In thermal nanoimprint lithography (thermal-NIL), the polymer resist is typically heated above its:

• Melting point

• Glass transition temperature (Tg)

• Boiling point

• Sublimation point

What wavelength of light is primarily used in Extreme Ultraviolet Lithography (EUVL)?

• 193 nm

• 248 nm

• 13.5 nm

• 365 nm

Which lithography technique is best suited for mass-producing nanoscale structures economically once an initial mold has been fabricated?

• Electron Beam Lithography (EBL)

• Extreme UV Lithography (EUVL)

• Nanoimprint Lithography (NIL)

• Focused Ion Beam (FIB)

DNA-assisted assembly in nanofabrication primarily relies on which mechanism?

• Physical sputtering

• Chemical etching

• Biological molecular recognition

• Mechanical deformation

One primary use of Focused Ion Beam (FIB) in semiconductor manufacturing is:

• High-throughput wafer production

• Rapid prototyping and circuit editing

• Large-area coating deposition

• Mass-scale integrated circuit production

What is one major challenge currently faced in implementing EUV lithography for mass semiconductor production?

• Difficulty generating sufficient EUV source power

• High cost of electron-sensitive resists

• Requirement of thick polymer resists

• Low resolution limits compared to Electron Beam Lithography