113-1電機二乙電子學2-2

113-1電機二乙電子學2-2

Assessment

Quiz

Engineering

11th Grade

Hard

Created by

煥宗 賴

Used 1+ times

FREE Resource

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10 questions

Show all answers

1.

MULTIPLE CHOICE QUESTION

10 sec • 1 pt

有關二極體PN電容特性,下列敘述何者有誤

空乏電容與逆向偏壓成反比

空乏電容與空乏區寬度成反比

擴散電容與順向偏壓成正比

擴散電容與電子電洞平均壽命無關

2.

MULTIPLE CHOICE QUESTION

10 sec • 1 pt

有一P-N接面二極體,若P型的雜質濃度高於N型,其空乏區以哪一型區所佔的寬度較大?

N型區

P型區

兩區相等

無法比較

3.

MULTIPLE CHOICE QUESTION

10 sec • 1 pt

室溫下,矽二極體的障壁電位(壓)為何?

0.1

0.3

0.5

0.7

4.

MULTIPLE CHOICE QUESTION

10 sec • 1 pt

室溫下,鍺(Ge)二極體每上升1oC則障壁電壓有何影響?

+1mV

-1mV

+2.5mV

-2.5mV

5.

MULTIPLE CHOICE QUESTION

10 sec • 1 pt

障壁電位是因為在空乏區內有什麼?

自由電子

電洞

自由電子與電洞

正離子與負離子

6.

MULTIPLE CHOICE QUESTION

10 sec • 1 pt

PN接面二極體的障壁電位,其極性為何?

P端為正,N端為負

P端為負,N端為正

視溫度而定

視雜質濃度而定

7.

FILL IN THE BLANK QUESTION

1 min • 1 pt

P型半導體與N型半導體結合時,在PN接面會形成空乏區,在靠P側的空乏區內有什麼?

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