CMOS Design Quiz

Tell the n-type semiconductor have _______ as majority carriers.

• Holes

• Negative ions

• Electrons

• Positive ions

Cite on the majority carriers of p-type semiconductor are:

• Holes

• Negative ions

• Electrons

• Positive ions

Match the n-MOS transistor is made up of:

• N-type source, n-type drain and p-type bulk

• N-type source, p-type drain and p-type bulk

• P-type source, n-type drain and n-type bulk

• P-type source, p-type drain and n-type bulk

Find the oxide layer formed in the MOSFET is:

• Metal oxide

• Silicon dioxide

• Poly Silicon oxide

• Oxides of Non metals

Locate the drain current is varied by:

• Gate to source voltage

• Gate current

• Source Voltage

• None of the mentioned

Read the low voltage on the gate of p-MOSFET forms:

• Channel of negative carriers

• Channel is not formed

• Channel is clipped

• Channel of positive carriers

Choose the n-MOSFET is working as accumulation mode when:

• Gate is applied with positive voltage

• Gate is grounded

• Gate is applied with negative voltage

• Gate is connected to source

Match the current through the n-MOS transistor will flow when:

• Vgs > Vtreshold, Vds = 0

• Vgd < Vtreshold, Vds = 0

• Vgs > Vtreshold, Vds > 0

• Vgd > Vtreshold, Vds < 0

Select the Fermi potential of the p-type MOSFET is:

• φfp = (kT/q)ln(ND/NA)

• φfp = (kT/q)ln(NA/ND)

• φfp = (kT/q)ln(NA/ni)

• φfp = (kT/q)ln(ni/NA)

Omit the Fermi potential (φfp) for the n-type MOSFET is:

• φfp = (kT/q)ln(ND/NA)

• φfp = (kT/q)ln(NA/ND)

• φfp = (kT/q)ln(ND/ni)

• φfp = (kT/q)ln(ni/ND)