Power Electronics - 1

For similar power rating of the switching device, which one is faster

• Power MOSFET

• IGBT

• GTO

• SCR

The arrow on the symbol of MOSFET indicates that

• it is a N-channel MOSFET

• the direction of electrons

• the direction of conventional current flow

• that it is a P-channel MOSFET

Which devices do not belong to the transistor family?

• IGBT

• MOSFET

• GTO

• BJT

If the cathode of an SCR is made positive with respect to the anode & no gate current is applied

then

• all the junctions are reversed biased

• all the junctions are forward biased

• only the middle junction is forward biased

• only the middle junction is reversed biased

At present, state-of-the-art semiconductor devices are being manufactured using

• Semiconducting Diamond

• Gallium-Arsenide

• Germanium

• Silicon-Carbide

In case of a practical p-n junction diode, the rise in the junction temperature

• decreases the width of the depletion region

• increases the barrier potential

• increases the width of the depletion region

• width of the depletion region increases but the barrier potential remains constant

In a Schottky diode, the Aluminium metal acts as a

• anode

• cathode

• gate

• common terminal

If the doping levels of the semiconductor is increased, then the width of the depletion layer

• increases

• decreases

• is unchanged

• keeps oscillating

Which one of the following Power semi-conductor devices has bidirectional current capability

• SCR

• MOSFET

• TRIAC

• IGBT

For a power transistor, if the forward current gain α = 0.97, then β is

• 0.03

• 2.03

• 49.24

• 32.33