PN junction semiconductor and diode quiz

Explain the formation of a PN junction in a semiconductor.

• A PN junction is established by exposing a semiconductor to ultraviolet light

• A PN junction is formed by bringing together a P-type semiconductor and an N-type semiconductor, creating a depletion region with a barrier potential.

• A PN junction is formed by heating a semiconductor at high temperatures

• A PN junction is created by mixing two different colored semiconductors

What are the characteristics of a PN junction diode?

• Characteristics of a PN junction diode include compatibility with magnetic fields

• Characteristics of a PN junction diode include rectification, forward and reverse bias behavior, forward voltage drop, and light emission in LEDs.

• Characteristics of a PN junction diode include wireless charging capabilities

• Characteristics of a PN junction diode include amplification of signals

Describe the working principle of forward bias in a PN junction diode.

• Reverse biasing increases the width of the depletion region in a PN junction diode

• Forward biasing a PN junction diode reduces the current flow

• Forward biasing a PN junction diode involves connecting the positive terminal of the battery to the P-type material and the negative terminal to the N-type material, reducing the width of the depletion region and enabling current flow.

• Forward biasing a PN junction diode involves connecting the positive terminal to the N-type material

Explain the working principle of reverse bias in a PN junction diode.

• Reverse bias in a PN junction diode creates a widened depletion region, preventing current flow.

• Reverse bias in a PN junction diode has no effect on the depletion region

• Reverse bias in a PN junction diode reduces the width of the depletion region

• Reverse bias in a PN junction diode increases the forward current flow

What happens at the atomic level when a PN junction is formed?

• The PN junction emits light due to the collision of electrons and protons.

• Protons from the P-type material diffuse across the junction to the N-type material, creating a depletion region and an electric field.

• The atomic nuclei in the N-type material combine with the electrons in the P-type material, neutralizing the junction.

• Electrons from the N-type material diffuse across the junction to the P-type material, creating a depletion region and an electric field.

How does the depletion region behave in a PN junction diode?

• Enhances the flow of majority charge carriers

• Causes a short circuit

• Has no effect on charge carriers

• Acts as a barrier to the flow of majority charge carriers

What is the role of majority and minority charge carriers in a PN junction diode?

• Majority charge carriers in a PN junction diode are protons in the N-type material and electrons in the P-type material.

• Majority charge carriers in a PN junction diode are electrons in the N-type material and holes in the P-type material, while minority charge carriers are holes in the N-type material and electrons in the P-type material.

• Majority charge carriers in a PN junction diode are neutrons in the N-type material and electrons in the P-type material.

• Minority charge carriers in a PN junction diode are electrons in the N-type material and protons in the P-type material.

Explain the concept of barrier potential in a PN junction diode.

• Barrier potential is only present in NPN junction diodes

• Barrier potential in a PN junction diode is the potential difference established across the junction due to the migration of majority charge carriers, creating a depletion region and preventing further flow of majority carriers.

• Barrier potential is the same as forward bias voltage in a diode

• Barrier potential is the result of minority charge carriers crossing the junction freely

What is the significance of the built-in potential in a PN junction diode?

• The built-in potential decreases the breakdown voltage of the diode

• The built-in potential has no effect on the diode operation

• The built-in potential increases the reverse bias voltage of the diode

• The built-in potential creates a depletion region that controls the flow of current in a PN junction diode.

Describe the recombination process in a forward-biased PN junction diode.

• Recombination in a forward-biased PN junction diode involves protons and neutrons combining at the junction.

• Recombination in a forward-biased PN junction diode involves electrons from the N-type material and holes from the P-type material moving towards the junction and recombining, releasing energy.

• The recombination process in a forward-biased PN junction diode results in the emission of light.

• In a forward-biased PN junction diode, recombination occurs due to the flow of AC current.