microelectronics game

microelectronics game

University

5 Qs

quiz-placeholder

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microelectronics game

microelectronics game

Assessment

Quiz

Science

University

Hard

Created by

昊翰 鞏

Used 14+ times

FREE Resource

5 questions

Show all answers

1.

FILL IN THE BLANK QUESTION

3 mins • 10 pts

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Answer explanation

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2.

MULTIPLE CHOICE QUESTION

5 mins • 15 pts

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Which of the following values is incorrect for the circuit shown in Figure (2)?

VCE = 2.5 V

VC = -4 V

IE = 4 mA

VB = -5 V

Answer explanation

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3.

FILL IN THE BLANK QUESTION

3 mins • 10 pts

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In the FET circuit shown in Figure (3), with all transistor characteristics being the same. Also, parameters VT = 1V and K = 0.3 mA/V2, what is the value of ID?

Answer explanation

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4.

FILL IN THE BLANK QUESTION

1 min • 1 pt

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In the PNP biasing circuit shown in Figure (4), given that both the diode and transistor are made by silicon, what is the approximate power dissipation of the transistor?

Answer explanation

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5.

FILL IN THE BLANK QUESTION

1 min • 1 pt

The reverse leakage current of a certain silicon diode is 4 nA at 25°C. When the leakage current increases to 210 nA, what is the temperature of the diode?

Answer explanation

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