microelectronics game

Quiz
•
Science
•
University
•
Hard
昊翰 鞏
Used 14+ times
FREE Resource
5 questions
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1.
FILL IN THE BLANK QUESTION
3 mins • 10 pts
Answer explanation
2.
MULTIPLE CHOICE QUESTION
5 mins • 15 pts
Which of the following values is incorrect for the circuit shown in Figure (2)?
VCE = 2.5 V
VC = -4 V
IE = 4 mA
VB = -5 V
Answer explanation
3.
FILL IN THE BLANK QUESTION
3 mins • 10 pts
In the FET circuit shown in Figure (3), with all transistor characteristics being the same. Also, parameters VT = 1V and K = 0.3 mA/V2, what is the value of ID?
Answer explanation
4.
FILL IN THE BLANK QUESTION
1 min • 1 pt
In the PNP biasing circuit shown in Figure (4), given that both the diode and transistor are made by silicon, what is the approximate power dissipation of the transistor?
Answer explanation
5.
FILL IN THE BLANK QUESTION
1 min • 1 pt
The reverse leakage current of a certain silicon diode is 4 nA at 25°C. When the leakage current increases to 210 nA, what is the temperature of the diode?
Answer explanation
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