20EE262-BEEE-SQ3

__________ is a device that can be used to regulate voltage in an electrical system.

• PN junction diode

• Zener diode

• MOSFET

• JFET

The peak reverse voltage of the diode is the _________

• maximum amount of voltage that the diode can withstand in forward bias

• maximum amount of voltage that the diode can withstand in reverse bias

• forward voltage drop of a diode

• reverse voltage drop of a diode

A simple PN junction diode is fabricated using ________ semiconductor and can be used as a _____________

• intrinsic, unidirectional switch

• extrinsic, bidirectional switch

• intrinsic, bidirectional switch

• extrinsic, unidirectional switch

In a Zener diode with high breakdown voltage, _________

• both P and N are heavily doped

• both P and N are lightly doped

• either P or N is lightly doped

• either P or N is heavily doped

In BJT, the emitter diode is usually __________

• forward- biased

• reverse-biased

• non-conducting

• operating in the breakdown region

In CE configuration, when there is no base current in a transistor switch, the transistor will be in __________ state.

• Partially On

• On

• Off

• partially off

A JFET has high input impedance because __________

• it has narrow depletion region between gate and channel

• its gate is reverse biased

• it operates in the saturation region

• it has a low transconductance

In a JFET, when drain voltage is equal to pinch-off voltage, the depletion layers have____

• maximum thickness

• minimum thickness

• uniform thickness

• moderate thickness

A MOSFET is otherwise known as _______ JFET.

• closed gate

• open gate

• shorted gate

• insulated gate

A MOSFET uses the electric field of a ________ to control the channel current.

• gate capacitance

• barrier potential of PN junction

• semiconductor material

• dielectric