Electronics

The barrier potential across the p-n junction is created by

• Majority carriers

• Minority carriers

• Fixed rows of oppositely charged ions

• Depletion layer

A device used for conversion of AC into DC is called

• Oscillator

• Detector

• Amplifier

• Rectifier

A p-n junction of semiconductor diode cannot be used as

• An amplifier

• A rectifier

• A detector

• Fan open or close switch

A photo diode is usually made from

• Bismuth

• Antimony

• Silicon

• None of them

A light emitting diode (LED) is made from

• Gallium arsenide (GaAs)

• Gallium phosphide (GaPO)

• Gallium assented phosphide (GaAsP)

• All of the above

The emitter collector and base current I_E, I_C and I_B respectively are related as

• I_E = I_C – I_B

• I_B = I_E – I_C

• I_E = I_C + I_B

• I_C = I_E + I_B

The potential barrier for SI at room temperature

• 0.9 volts

• 0.7 volts

• 0.3 volts

• 1 volts

The symbol of p-n-p transistor is

• 
• 
• 
• 

A device which converts a physical quantity into voltage is called

• Sensor

• Switch

• Inverter

• Amplifier

A P-N junction or semiconductor diode cannot be used as

• Rectifier

• Detector

• Oscillator

• An amplifier