Intro to VLSI

Electronics are characterized by

• low cost

• low weight and volume

• reliability

• all of the mentioned

Speed power product is measured as the product of

• gate switching delay and gate power dissipation

• gate switching delay and gate power absorption

• gate switching delay and net gate power

• gate power dissipation and absorption

nMOS devices are formed in

• p-type substrate of high doping level

• n-type substrate of low doping level

• p-type substrate of moderate doping level

• n-type substrate of high doping level

Source and drain in nMOS device are isolated by

• a single diode

• two diodes

• three diodes

• four diodes

In depletion mode, source and drain are connected by

• insulating channel

• conducting channel

• Vdd

• Vss

The condition for non saturated region is

• Vds = Vgs – Vt

• Vgs lesser than Vt

• Vds lesser than Vgs – Vt

• Vds greater than Vgs – Vt

In enhancement mode, device is in _________ condition

• conducting

• non conducting

• partially conducting

• insulating

MOS transistor structure is

• symmetrical

• non symmetrical

• semi symmetrical

• pseudo symmetrical

The condition for linear region is

• Vgs lesser than Vt

• Vgs greater than Vt

• Vds lesser than Vgs

• Vds greater than Vgs

As source drain voltage increases, channel depth

• increases

• decreases

• logarithmically increases

• exponentially increses